• DocumentCode
    3718590
  • Title

    SiGe HBT TCAD Simulation Taking into Account Impact of Proton Radiation

  • Author

    Konstantin O. Petrosyants;Maxim V. Kozhukhov

  • Author_Institution
    Moscow Inst. of Electron. &
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Performance degradation of SiGe HBT after proton radiation impact is investigated using Synopsys Sentaurus tool. A new model to account for the impact of proton irradiation on physical parameters (τ, S0, Nit) is included in the program. The method to account for the impact of proton radiation is based on additivity of the ionization and displacement effects. Comparison of simulated and experimental characteristics of SiGe HBT after subjection to proton fluences up to 5·1013 p/cm2 shows the 10-20% error.
  • Keywords
    "Protons","Silicon germanium","Radiation effects","Heterojunction bipolar transistors","Mathematical model","Ionization","Neutrons"
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
  • Print_ISBN
    978-1-5090-0232-0
  • Type

    conf

  • DOI
    10.1109/RADECS.2015.7365666
  • Filename
    7365666
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3718590