Title :
TCAD Simulation of Total Ionization Dose Response of 45nm High-K MOSFETs on Bulk Silicon and SOI Substrate
Author :
Konstantin O. Petrosyants;Dmitriy A. Popov
Author_Institution :
Moscow Inst. of Electron. &
Abstract :
New semi-empirical model accounting for TID dependences of bulk, oxide, HfO2/Si interface trap densities, carrier mobilities, lifetime of device material was developed and introduced into TCAD tool. TID response of 45nm high-k MOSFETs on bulk and SOI substrate was simulated.
Keywords :
"MOSFET","Logic gates","Hafnium compounds","High K dielectric materials","Semiconductor device modeling","Tunneling","Leakage currents"
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
DOI :
10.1109/RADECS.2015.7365671
