• DocumentCode
    3718595
  • Title

    TCAD Simulation of Total Ionization Dose Response of 45nm High-K MOSFETs on Bulk Silicon and SOI Substrate

  • Author

    Konstantin O. Petrosyants;Dmitriy A. Popov

  • Author_Institution
    Moscow Inst. of Electron. &
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    New semi-empirical model accounting for TID dependences of bulk, oxide, HfO2/Si interface trap densities, carrier mobilities, lifetime of device material was developed and introduced into TCAD tool. TID response of 45nm high-k MOSFETs on bulk and SOI substrate was simulated.
  • Keywords
    "MOSFET","Logic gates","Hafnium compounds","High K dielectric materials","Semiconductor device modeling","Tunneling","Leakage currents"
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
  • Print_ISBN
    978-1-5090-0232-0
  • Type

    conf

  • DOI
    10.1109/RADECS.2015.7365671
  • Filename
    7365671
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3718595