DocumentCode :
3718596
Title :
The "Livio Scarsi" X-Ray Facility at University of Palermo for Device Testing
Author :
F. Principato;G. Gerardi;A. A. Turturici;G. Raso;M. Quartararo;F. Pintacuda;L. Abbene
Author_Institution :
Dipt. di Fis. e Chim., Univ. di Palermo, Palermo, Italy
fYear :
2015
Firstpage :
1
Lastpage :
7
Abstract :
In this work, we report on the characteristics of the Livio Scarsi X-ray facility at University of Palermo. The facility is able to produce low energy X rays, within the energy range of 0.1-60 keV, with fluence rates ranging from 105-108 photons/mm2 s. The laboratory is equipped with an innovative digital detection system, based on semiconductor detectors (Si and CdTe detectors), able to provide accurate and precise estimation of the fluence rate, the energy and the exposure of X rays, even at high counting rate conditions. Instrumentation for electrical characterization (DC-AC) of semiconductor devices, for both off-line and on-line (i.e. during the irradiation) measurements, is also available. Total ionizing dose (TID) tests on rad-hard power MOSFET transistors by using both X rays and 60Co gamma rays are presented. The aim of this work is to open up to potential users for low energy X-ray applications.
Keywords :
"Detectors","Radiation effects","MOSFET","Logic gates","Electron tubes","II-VI semiconductor materials","Cadmium compounds"
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
Type :
conf
DOI :
10.1109/RADECS.2015.7365672
Filename :
7365672
Link To Document :
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