The Features of Radiation-Hardening-By-Design of Bulk SRAM Cells

The main circuit design and constructive-topological SRAM cells Radiation-Hardening-By-Design (RHBD) methods applied in 250 ... 90 nm bulk CMOS processes were analyzed. The test chip research results show that an increase of the 6T-memory cell area by 1.5 times can significantly improve the tolerance to all the radiation factors. The CMOS SRAM 4 Mbit, 16 Mbit chips and IP-blocks as part of ASIC were designed and implemented in 250 ... 90 nm bulk CMOS processes using the considered RHBD methods.