Title :
The Issue of Using Test Dose Rate 10 mrad(Si)/s for ELDRS Prediction in MIL-STD-883-H
Author :
Alexander T. Yastrebov;Viacheslav S. Pershenkov;Alexander S. Bakerenkov;Vladislav A. Felitsyn;Alexander S. Rodin;Vladimir V. Belyakov;Vladimir V. Shurenkov
Author_Institution :
Moscow Eng. Phys. Inst., Nat. Res. Nucl. Univ. MEPhI, Moscow, Russia
Abstract :
The validity of MIL STD 883 H test method at dose rate less than 10 mrad(Si)/s is discussed. The prediction capability of conversion model is evaluated at ultra-low dose rates in comparison with standard MIL-STD-883-H.
Keywords :
"Degradation","Integrated circuit modeling","Military standards","Radiation effects","Fitting","Bipolar transistors"
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
DOI :
10.1109/RADECS.2015.7365680
