• DocumentCode
    3718607
  • Title

    The TID Effects of RRAM Based Oxide Material

  • Author

    Yan Wang;Jinshun Bi;Jing Liu;Qi Liu;Hangbing Lv;Shibing Long;Ming Liu

  • Author_Institution
    Lab. of Nano-Fabrication &
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    RRAM exhibit highly stable characteristics under TID radiation. But different radiation effects are shown in the RRAM based different oxide. The radiation effects in RRAM based HfO2 and SiO2 are test and analyzed.
  • Keywords
    "Hafnium compounds","Radiation effects","Nonvolatile memory","Resistance","Insulators","Statistical distributions","Yttrium"
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
  • Print_ISBN
    978-1-5090-0232-0
  • Type

    conf

  • DOI
    10.1109/RADECS.2015.7365683
  • Filename
    7365683
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3718607