Title :
The TID Effects of RRAM Based Oxide Material
Author :
Yan Wang;Jinshun Bi;Jing Liu;Qi Liu;Hangbing Lv;Shibing Long;Ming Liu
Author_Institution :
Lab. of Nano-Fabrication &
Abstract :
RRAM exhibit highly stable characteristics under TID radiation. But different radiation effects are shown in the RRAM based different oxide. The radiation effects in RRAM based HfO2 and SiO2 are test and analyzed.
Keywords :
"Hafnium compounds","Radiation effects","Nonvolatile memory","Resistance","Insulators","Statistical distributions","Yttrium"
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
DOI :
10.1109/RADECS.2015.7365683
