• DocumentCode
    3718609
  • Title

    TID Impact on Process Modified CBRAM Cells

  • Author

    Y. Gonzalez-Velo;A. Mahmud;W. Chen;J. Taggart;H. J. Barnaby;M. N. Kozicki;M. Ailavajhala;K. E. Holbert;M. Mitkova

  • Author_Institution
    Sch. of Electr., Comput. &
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this study it is shown that Conductive Bridging Random Access Memory (CBRAM) might be sensitive to Total Ionizing Dose (TID) depending on the manufacturing process. TID levels at which sensitivity occurs for one of the studied processes are still very high, showing that CBRAM technology is a very interesting solution for future Non Volatile Memory (NVM) technologies to be used in space.
  • Keywords
    "Resistance","Switches","Yttrium","Metallization","Silver","Electrodes"
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
  • Print_ISBN
    978-1-5090-0232-0
  • Type

    conf

  • DOI
    10.1109/RADECS.2015.7365685
  • Filename
    7365685
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3718609