DocumentCode :
3718609
Title :
TID Impact on Process Modified CBRAM Cells
Author :
Y. Gonzalez-Velo;A. Mahmud;W. Chen;J. Taggart;H. J. Barnaby;M. N. Kozicki;M. Ailavajhala;K. E. Holbert;M. Mitkova
Author_Institution :
Sch. of Electr., Comput. &
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
In this study it is shown that Conductive Bridging Random Access Memory (CBRAM) might be sensitive to Total Ionizing Dose (TID) depending on the manufacturing process. TID levels at which sensitivity occurs for one of the studied processes are still very high, showing that CBRAM technology is a very interesting solution for future Non Volatile Memory (NVM) technologies to be used in space.
Keywords :
"Resistance","Switches","Yttrium","Metallization","Silver","Electrodes"
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
Type :
conf
DOI :
10.1109/RADECS.2015.7365685
Filename :
7365685
Link To Document :
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