DocumentCode :
3718613
Title :
Total Ionizing Dose Effects in Carbon Nanotube Network Transistors
Author :
Satoshi Ishii;Daisuke Yabe;Shigeki Koshio;Toshio Hirao;Shotaro Enomoto;Teruaki Konishi;Tsuyoshi Hamano
Author_Institution :
Dept. of Phys., Tokyo Denki Univ., Saitama, Japan
fYear :
2015
Firstpage :
1
Lastpage :
3
Abstract :
Total ionizing dose effects on carbon nanotube network transistors were experimentally evaluated using 60Co gamma-ray irradiation up to 50 kGy(Si). The electrical characteristic of the devices after irradiation are reported for future space applications.
Keywords :
"Radiation effects","CNTFETs","Threshold voltage","Carbon nanotubes","Logic gates","Physics"
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
Type :
conf
DOI :
10.1109/RADECS.2015.7365689
Filename :
7365689
Link To Document :
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