Title :
UV Single-Photon Absorption Single-Event Transient Testing of Pristine and Irradiated AlGaN/GaN HEMTs
Author :
Ani Khachatrian;Nicolas J.-H. Roche;Stephen P. Buchner;Andrew D. Koehler;Jordan D. Greenlee;Travis J. Anderson;Jeffrey H. Warner;Dale McMorrow
Author_Institution :
Sotera Defense Solutions, Herndon, VA, USA
Abstract :
Carrier injection by single photon absorption using ultraviolet optical pulses is used to investigate single-event transients in pristine and proton-irradiated AlGaN/GaN HEMTs. The resulting transient shape and amplitude depends strongly on the specific location of the injected carriers, and varies with changes in gate and drain bias.
Keywords :
"Aluminum gallium nitride","Wide band gap semiconductors","HEMTs","MODFETs","Logic gates","Transient analysis","Gallium nitride"
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
DOI :
10.1109/RADECS.2015.7365693
