DocumentCode :
3720625
Title :
Investigating a thermal breakdown model and experiments on a silicon-based low-noise amplifier under microwave pulses
Author :
Shuo Zhang;Liang Zhou
Author_Institution :
Center for Microwave and RF Technologies, Shanghai Jiao Tong University, China
fYear :
2015
Firstpage :
137
Lastpage :
139
Abstract :
This study investigated a thermal breakdown model for semiconductor devices under the injection of microwave pulses. A general equation was derived to calculate power to failure, which depended on the pulse width and its duty cycle. The equation was able to calculate the threshold power given the parameters of a certain semiconductor device. This analysis is useful for further discussion on semiconductor protection under microwave pulses.
Keywords :
"Electric breakdown","Indexes","Radio frequency","Heating"
Publisher :
ieee
Conference_Titel :
Environmental Electromagnetics (CEEM), 2015 7th Asia-Pacific Conference on
Print_ISBN :
978-1-4673-9444-4
Type :
conf
DOI :
10.1109/CEEM.2015.7368648
Filename :
7368648
Link To Document :
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