Investigating a thermal breakdown model and experiments on a silicon-based low-noise amplifier under microwave pulses

This study investigated a thermal breakdown model for semiconductor devices under the injection of microwave pulses. A general equation was derived to calculate power to failure, which depended on the pulse width and its duty cycle. The equation was able to calculate the threshold power given the parameters of a certain semiconductor device. This analysis is useful for further discussion on semiconductor protection under microwave pulses.