Characterization of ring modulators and broadband photodetectors in silicon photonics for 25 Gb/s interconnection

This paper presents the characterization of silicon photonics active devices and a framework for the analysis of their application in high bit rates transceiver used for optical interconnection. System simulation of eye-diagrams that include measured S-parameters are shown for an optical link up to 25 Gb/s, including a SiGe transimpedance amplifier IC (TIA) developed at CTI. Considerations about the integration of devices in the development of optical interconnections are presented along device results.