DocumentCode
3721073
Title
Efficiency optimization for a power factor correction (PFC) rectifier with gallium nitride transistor
Author
Sven Bolte;Norbert Fr?hleke;Joachim B?cker
Author_Institution
Power Electronics and Electrical Drives, University of Paderborn, D-33095 Paderborn, Germany
fYear
2015
Firstpage
220
Lastpage
223
Abstract
In this contribution, a 1 kW one phase power factor correction (PFC) rectifier with a Gallium Nitride (GaN) transistor is optimized considering switching frequency in regard to the losses of the PFC inductor. A driver circuit with negative voltage at switch-off supplied from a unipolar voltage supply is proposed. A model of the PFC rectifier including conduction and switching losses of semiconductors, copper and core losses of inductor is developed and utilized to identify the best design by numeric optimization of switching frequency, number of turns and length of air gap. Simulation results show an efficiency of about 98.6% at full load with 230 V mains voltage.
Keywords
"Transistors","Inductors","Loss measurement","Gallium nitride","Logic gates","Rectifiers","Switching circuits"
Publisher
ieee
Conference_Titel
Wide Bandgap Power Devices and Applications (WiPDA), 2015 IEEE 3rd Workshop on
Type
conf
DOI
10.1109/WiPDA.2015.7369288
Filename
7369288
Link To Document