• DocumentCode
    3721108
  • Title

    A high temperature comparator in CMOS SiC

  • Author

    A. Rahman;K. Addington;M. Barlow;S. Ahmed;H. A. Mantooth;A. M. Francis

  • Author_Institution
    Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA
  • fYear
    2015
  • Firstpage
    236
  • Lastpage
    240
  • Abstract
    This paper demonstrates the first reported high temperature voltage comparator in CMOS silicon carbide. The comparator was designed in a 1.2 μm CMOS SiC process and has been tested for a voltage supply of 12 V to 15 V. The rail to rail voltage comparator has been tested up to 450°C with rise and fall times of 31 ns and 22 ns respectively, and positive and negative propagation delays of 108 ns and 107 ns respectively.
  • Keywords
    "Silicon carbide","Propagation delay","Field effect transistors","CMOS integrated circuits","Photonic band gap","Hysteresis"
  • Publisher
    ieee
  • Conference_Titel
    Wide Bandgap Power Devices and Applications (WiPDA), 2015 IEEE 3rd Workshop on
  • Type

    conf

  • DOI
    10.1109/WiPDA.2015.7369323
  • Filename
    7369323
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3721108