DocumentCode :
3721795
Title :
Development of new gas sensors based on oxidized galinstan
Author :
Mahnaz Shafiei;Nunzio Motta;Faegheh Hoshyargar;Anthony P. O´Mullanc
Author_Institution :
Institute for Future Environments and School of Chemistry, Physics, and Mechanical Engineering, Queensland University of Technology (QUT) Brisbane, QLD 4001, Australia
fYear :
2015
Firstpage :
1
Lastpage :
3
Abstract :
For the first time, we have fabricated and tested conductometric sensors based on oxidized liquid galinstan towards NO2 and NH3 gases at low operating temperatures. Galinstan based films on silicon substrates have been studied with two different loadings. Surface morphology of the films was investigated by means of field emission scanning electron microscopy (FESEM). The sensor with higher galinstan loading showed a better sensitivity, which can be attributed to a higher surface area, as confirmed by SEM. At 100°C, a detection limit as low as 1 and 20 ppm was measured for NO2 and NH3, respectively.
Keywords :
"Temperature sensors","Films","Gas detectors","Liquids","Temperature measurement","Image sensors"
Publisher :
ieee
Conference_Titel :
SENSORS, 2015 IEEE
Type :
conf
DOI :
10.1109/ICSENS.2015.7370331
Filename :
7370331
Link To Document :
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