On relaxing page program disturbance over 3D MLC flash memory

With the rapidly-increasing capacity demand over flash memory, 3D NAND flash memory has drawn tremendous attention as a promising solution to further reduce the bit cost and to increase the bit density. However, such advanced 3D devices will suffer more intensive program disturbance, compared to 2D NAND flash memory. Especially when multi-level-cell (MLC) technology is adopted, the deteriorated disturbance due to the program operations of intra and inter pages will become even more critical for reliability. In contrast to the past efforts that try to resolve the reliability issue with error correction codes or hardware designs, this work seeks for the redesign of the program operation. A disturb-aware programming scheme is proposed to not only relax the disturbance induced by slow cells as much as possible but also reduce the possibility in requiring a high voltage to program the slow cells. A series of experiments was conducted based on real 3D MLC flash chips, and the results demonstrate that the proposed scheme is extremely effective on reducing the disturbance as well as the bit error rate.