• DocumentCode
    3723612
  • Title

    An analysis of the read margin and power consumption of crossbar ReRAM arrays

  • Author

    Sujin Choi; Wookyung Sun; Hyein Lim; Hyungsoon Shin

  • Author_Institution
    Department of Electronics Engineering, Ewha Womans University, Seoul, Korea
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The read margin and power consumption for various selector characteristics and bias schemes are analyzed during read operation. The 1/2 and 1/3 bias schemes exhibit different read operation properties. There is a trade-off between the read margin and power consumption that depends on the bias scheme and characteristics of the selector. The read margin of the 1/2 bias scheme is decreased at low on/off ratios because of the output voltage drop across the LRS cell. This drop is due to a rapid increase in the leakage current when a selector with low on/off ratio is used in the 1/2 bias scheme. Therefore, the bias scheme and selector should be selected appropriately according to the purpose of the application.
  • Keywords
    "Power demand","Computer architecture","Microprocessors","Leakage currents","Resistance","Random access memory","Voltage measurement"
  • Publisher
    ieee
  • Conference_Titel
    TENCON 2015 - 2015 IEEE Region 10 Conference
  • ISSN
    2159-3442
  • Print_ISBN
    978-1-4799-8639-2
  • Electronic_ISBN
    2159-3450
  • Type

    conf

  • DOI
    10.1109/TENCON.2015.7372853
  • Filename
    7372853