DocumentCode
3723612
Title
An analysis of the read margin and power consumption of crossbar ReRAM arrays
Author
Sujin Choi; Wookyung Sun; Hyein Lim; Hyungsoon Shin
Author_Institution
Department of Electronics Engineering, Ewha Womans University, Seoul, Korea
fYear
2015
Firstpage
1
Lastpage
3
Abstract
The read margin and power consumption for various selector characteristics and bias schemes are analyzed during read operation. The 1/2 and 1/3 bias schemes exhibit different read operation properties. There is a trade-off between the read margin and power consumption that depends on the bias scheme and characteristics of the selector. The read margin of the 1/2 bias scheme is decreased at low on/off ratios because of the output voltage drop across the LRS cell. This drop is due to a rapid increase in the leakage current when a selector with low on/off ratio is used in the 1/2 bias scheme. Therefore, the bias scheme and selector should be selected appropriately according to the purpose of the application.
Keywords
"Power demand","Computer architecture","Microprocessors","Leakage currents","Resistance","Random access memory","Voltage measurement"
Publisher
ieee
Conference_Titel
TENCON 2015 - 2015 IEEE Region 10 Conference
ISSN
2159-3442
Print_ISBN
978-1-4799-8639-2
Electronic_ISBN
2159-3450
Type
conf
DOI
10.1109/TENCON.2015.7372853
Filename
7372853
Link To Document