DocumentCode :
3723709
Title :
Design and optimization of high efficiency GaN HEMT class-E power amplifiers
Author :
Tomasz A. Filipek
Author_Institution :
Institute of Radioelectronics, Warsaw University of Technology, Nowowiejska 15/19, Poland
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
This paper describes a method for the design and optimization of high-efficiency microwave power amplifiers with a GaN HEMT transistor. The method is based on the fundamentals of class-E switching mode power amplifiers. For time and frequency analysis, a large-signal model of the transistor was adapted and developed with nonlinear output capacitance for the requirements of microwave range. As a result of the presented design algorithm and manufacture of the amplifier, a power added efficiency (PAE) of 75% at Pout = 7W (CW) was achieved. Moreover, PAE ≥ 70% at 10% bandwidth.
Keywords :
"Gallium nitride","RLC circuits","Optimization","Time-domain analysis","RNA","HEMTs","Radio frequency"
Publisher :
ieee
Conference_Titel :
TENCON 2015 - 2015 IEEE Region 10 Conference
ISSN :
2159-3442
Print_ISBN :
978-1-4799-8639-2
Electronic_ISBN :
2159-3450
Type :
conf
DOI :
10.1109/TENCON.2015.7372951
Filename :
7372951
Link To Document :
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