DocumentCode
3724992
Title
Double-wavelength sensitive AlGaN/GaN MISIM UV sensor using multi-layer graphene as Schottky electrodes
Author
Sang-Bum Kang; Chang-Ju Lee; Chul-Ho Won; Yi-Sak Koo; Jung-Hee Lee; Sung-Ho Hahm; Seul-Ki Hong; Byung-Jin Cho
Author_Institution
Coll. of IT Eng., Kyungpook Nat. Univ., Daegu, South Korea
fYear
2015
Firstpage
30
Lastpage
33
Abstract
We proposed and fabricated an AlGaN/GaN hetero-structure layer-based metal-insulator-semiconductor-insulator-metal type UV sensor by using five stacks of multi-layer graphene. It showed two clear cut-off wavelengths at 330 and 365 nm. Compared with that of Ni electrode, it showed very low leakage current and high photo-responsivity.
Keywords
"Graphene","Electrodes","Aluminum gallium nitride","Wide band gap semiconductors","Nickel","Radiation effects","Gallium nitride"
Publisher
ieee
Conference_Titel
Quality in Research (QiR), 2015 International Conference on
Print_ISBN
978-1-4799-6550-2
Type
conf
DOI
10.1109/QiR.2015.7374889
Filename
7374889
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