Performance analysis of organic transistor using different materials for source and drain electrodes

This paper investigates the performance optimization of the interface between the source (S)/drain (D) electrode and organic semiconductor layer. The impact of different materials on the electrical behavior of organic thin film transistor (OTFT) for S/D is analyzed. The different material of contact electrode affects the electrical characteristics due to their different work functions. The poly-3hexylethiophene (P3HT) is used as the channel active layer of the OTFT device. P3HT material is selected for organic semiconductor because of its higher mobility among conducting polymers. Furthermore, OTFT performance parameters are extracted in terms of current on-off ratio, mobility, threshold voltage, transconductance, sub-threshold slope and drive current. The extracted parameters are analyzed for five different contact electrode materials. The observed results indicate that the work function of different material is dominating factor which affects the performance parameters of the device significantly. Moreover, this also affects the barrier height between organic semiconductor and contact electrodes. The device behavior analysis and performance parameter extraction are performed in organic module of Atlas Silvaco 2-D device simulator before actual fabrication of organic transistors that save time and cost of final design and product.