Title :
Growth of light-emitting devices based on InGaN quantum dots by MOVPE
Author :
Lai Wang;Di Yang;Jiadong Yu;Zhibiao Hao;Yi Luo;Changzheng Sun;Yanjun Han;Bing Xiong;Jian Wang;Hongtao Li
Author_Institution :
Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
Abstract :
In this paper, we reported our recent progresses on growth of InGaN quantum dots and related light-emitting devices by metal organic vapor phase epitaxy.
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
DOI :
10.1109/CLEOPR.2015.7375891
