• DocumentCode
    3725908
  • Title

    Radiative and non-radiative carrier lifetimes in InGaN-based light-emitting diodes investigated by impedance analysis

  • Author

    Young-Jin Kim;Dong-Pyo Han;Gyeong Won Lee;Dong-Soo Shin;Jong-In Shim

  • Author_Institution
    Department of Electronics and Communication Engineering, Hanyang University, ERICA Campus, Ansan 426-791, Korea
  • Volume
    1
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    To investigate the efficiency droop in InGaN-based light-emitting diodes, we have measured the differential carrier lifetimes using the electrical method. After separating the radiative and non-radiative carrier lifetimes using the internal quantum efficiency, we discuss their implications.
  • Keywords
    "Light emitting diodes","Radiative recombination","Charge carrier lifetime","Impedance","Current measurement","Impedance measurement","Temperature measurement"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2015.7375898
  • Filename
    7375898
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3725908