Title :
Characteristics of film InP layer and Si substrate bonded interface bonded by wafer direct bonding
Author :
Keiichi Matsumoto;Yoshinori Kanaya;Junya Kishikawa;Kazuhiko Shimomura
Author_Institution :
Department of Engineering and Applied Sciences, Sophia University, Chiyoda, Tokyo 102-8554, Japan
Abstract :
We demonstrated bonding of thin film InP and Si using wafer direct bonding technique and compared with bulk InP/Si bonded sample in terms of bonding strength and defect formation. Electrical conduction through the interface was also investigated.
Keywords :
"Indium phosphide","III-V semiconductor materials","Silicon","Bonding","Substrates","Heating","Force"
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
DOI :
10.1109/CLEOPR.2015.7375926
