• DocumentCode
    3725936
  • Title

    Enhanced photoluminescence from n+-Ge epitaxial layers on Si: Effect of growth/annealing temperature

  • Author

    Naoki Higashitarumizu;Kazumi Wada;Yasuhiko Ishikawa

  • Author_Institution
    Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo, 113-8656, Japan
  • Volume
    1
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Photoluminescence intensity is studied for n-type Ge layers (~1×1019 cm-3) grown on Si. The growth and post-growth annealing temperatures are important factors to enhance the light emission together with the concentration of n-type doping.
  • Keywords
    "Annealing","Silicon","Temperature measurement","Doping","Furnaces","Photonics","Density measurement"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2015.7375927
  • Filename
    7375927
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3725936