Title :
Raman analysis of in-plane biaxial strain for Ge-on-Si lasers
Author :
Bugeun Ki;Jiwoong Baek;Chulwon Lee;Yong-Hoon Cho;Jungwoo Oh
Author_Institution :
School of Integrated Technology and Yonsei Institute of Convergence Technology, Yonsei University, Incheon, Korea
Abstract :
Tensile strain of Ge-on-Si with post-growth annealing was analyzed using micro-Raman for optical sources in interconnection system. Tensile Stain in epi-Ge distributed non-linearly with SiGe alloy formation at the interface after annealing.
Keywords :
"Tensile strain","Temperature measurement","Annealing","Silicon","Semiconductor device measurement","Photonic band gap"
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
DOI :
10.1109/CLEOPR.2015.7375928
