Title :
Controlling optical properties of Ge-on-Si by thermal annealing and etching process
Author :
Chulwon Lee;Bugeun Ki;Yang-Seok Yoo;Min-Ho Jang;Jungwoo Oh;Yong-Hoon Cho
Author_Institution :
Department of Physics and KI for the NanoCentury, KAIST, Daejeon, Korea
Abstract :
We studied optical properties of thermally annealed Ge-on-Si. From Raman experiments, tensile strain as well as Si-Ge intermixing were investigated. Significant Γ-band transition peak-shift was confirmed by photoluminescence depending on the thermal annealing conditions.
Keywords :
"Annealing","Etching","Tensile strain","Photoluminescence","System-on-chip","Silicon"
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
DOI :
10.1109/CLEOPR.2015.7375929
