DocumentCode :
3725994
Title :
Material response of semiconductors irradiated with IR ultrashort laser pulses
Author :
Ilya Mingareev;Mark Ramme;Martin Richardson
Author_Institution :
Townes Laser Institute, The College of Optics and Photonics, University of Central Florida, 4304 Scorpius Street, Orlando, FL 32826
Volume :
2
fYear :
2015
Firstpage :
1
Lastpage :
2
Abstract :
We utilize near- and mid-IR ultrafast laser radiation to investigate the processing of crystalline silicon with different dopants. A numerical model is adopted to simulate the material response depending on the wavelength and the dopant concentration.
Keywords :
"Absorption","Wavelength measurement","Silicon","Semiconductor device measurement","Radiation effects","Laser beams","Ultrafast optics"
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
Type :
conf
DOI :
10.1109/CLEOPR.2015.7375986
Filename :
7375986
Link To Document :
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