DocumentCode
3725994
Title
Material response of semiconductors irradiated with IR ultrashort laser pulses
Author
Ilya Mingareev;Mark Ramme;Martin Richardson
Author_Institution
Townes Laser Institute, The College of Optics and Photonics, University of Central Florida, 4304 Scorpius Street, Orlando, FL 32826
Volume
2
fYear
2015
Firstpage
1
Lastpage
2
Abstract
We utilize near- and mid-IR ultrafast laser radiation to investigate the processing of crystalline silicon with different dopants. A numerical model is adopted to simulate the material response depending on the wavelength and the dopant concentration.
Keywords
"Absorption","Wavelength measurement","Silicon","Semiconductor device measurement","Radiation effects","Laser beams","Ultrafast optics"
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
Type
conf
DOI
10.1109/CLEOPR.2015.7375986
Filename
7375986
Link To Document