Nitride-based light-emitting diodes using conducting filament embedded TCO

We present an electroforming transparent conductive electrode that enables current injection from metal to semiconductor, by forming conducting filaments (CFs) in wide-bandgap materials such as silicon nitride, and employ it as an n-type electrode for GaN-based vertical light-emitting diodes to investigate the effect of the CF densities on the electrical and optical characteristics in VLEDs.