• DocumentCode
    3726038
  • Title

    Drastic enhancement of Eu emission from red light-emitting Eu-doped GaN in a microcavity

  • Author

    Yasufumi Fujiwara;Tomohiro Inaba;Takanori Kojima;Atsushi Koizumi

  • Author_Institution
    Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
  • Volume
    2
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Eu-doped GaN (GaN:Eu) has been identified as a promising red emitter. A GaN:Eu layer was confined in a microcavity consisting of a Ag mirror and an AlGaN/GaN distributed Bragg reflector (DBR), resulting in drastic enhancement of Eu emission intensity.
  • Keywords
    "Light emitting diodes","Microcavities","Distributed Bragg reflectors","Gallium nitride","Ions","Reflectivity"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2015.7376030
  • Filename
    7376030
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3726038