Title :
Experimental and numerical investigation of slow carrier relaxation in an InGaAs/GaAs quantum dot laser diode
Author :
J. M. Lee;B. H. Jun;D. Lee;J. Kim
Author_Institution :
Department of Physics, Chungnam National University, Daejeon 305-764, Korea
Abstract :
Spontaneous emission from InGaAs/GaAs quantum dots was investigated above the lasing threshold through windows structure on a laser diode. We found a clear evidence of slow carrier relaxation from the excited state to the ground state in a lasing condition.
Keywords :
"Quantum dot lasers","Spontaneous emission","Diode lasers","Charge carrier density","Stationary state","Semiconductor optical amplifiers"
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
DOI :
10.1109/CLEOPR.2015.7376065
