Title :
Effect of the p-type GaN thickness on the near-ultraviolet light-emitting diodes
Author :
Hyo-Shik Choi;Dong-Soo Shin;Jong-In Shim
Author_Institution :
Department of Electronics and Communication Engineering, Hanyang University, Ansan Gyeonggi-do 426-791, Korea
Abstract :
We analyzed the influence of the p-type GaN layer thickness on the 380nm band near-ultraviolet light-emitting diodes. Both electrical and optical characteristics of the LEDs were getting worse p-type GaN layer thickness increases with growth time. We suggest that the possible degradation mechanisms of characteristics are due to the increase of the non-radiative (NR) recombination rate in the active region as a result of thermal damage during p-type GaN layer growth process.
Keywords :
"Light emitting diodes","Gallium nitride","Radiative recombination","Yttrium","Temperature measurement","Degradation","Temperature"
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
DOI :
10.1109/CLEOPR.2015.7376086
