DocumentCode :
3726095
Title :
Strong correlation between efficiency and carrier recombination processes in efficiency droop of GaN based light-emitting diodes
Author :
Yang-Seok Yoo;Jong-Ho Na;Sung Jin Son;Yong-Hoon Cho
Author_Institution :
Department of Physics and KAIST Center for LED Research, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
Volume :
2
fYear :
2015
Firstpage :
1
Lastpage :
2
Abstract :
We present strong correlation between efficiency droop and carrier recombination rate variation in GaN based light-emitting diodes. And we analyze effect of radiative and nonradiative recombination processes under current injection without assuming any theoretical model.
Keywords :
"Quantum well devices","Light emitting diodes","Radiative recombination","Correlation","Current measurement","Pulse measurements","Temperature measurement"
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
Type :
conf
DOI :
10.1109/CLEOPR.2015.7376087
Filename :
7376087
Link To Document :
بازگشت