Title :
Optimization of Lorentz model parameters for crystalline AS2S3, SiC and modified Lorentz model parameters for nanocrystalline SiO
Author :
Mehedi Islam;Md. Nazmul Islam;Monzurul Islam;Md. Ghulam Saber;Rakibul Hasan Sagor
Author_Institution :
Department of Electrical &
Abstract :
We have presented the optimized Lorentz model parameters for crystalline arsenic sulfide (AS2S3), silicon carbide (SiC) and modified Lorentz model parameters for nanocrystalline silicon monoxide (SiO) obtained using a large scale non-linear algorithm. The complex relative permittivity calculated using the optimized parameters agree well with the experimental values over broad frequency bands. The associated RMS deviations are 0.254, 0.003, 0.010 and 0.009 respectively.
Keywords :
"Silicon carbide","Permittivity","Mathematical model","Finite difference methods","Optimization","Silicon","Time-domain analysis"
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
DOI :
10.1109/CLEOPR.2015.7376137