DocumentCode :
3726162
Title :
Tm, Ho:KLu(WO4)2 microchip laser Q-switched by a Cr2+:ZnS saturable absorber
Author :
P. Loiko;J. M. Serres;X. Mateos;K. Yumashev;V. Petrov;U. Griebner;M. Aguiló;F. Diaz
Author_Institution :
Center for Optical Materials and Technologies, Belarusian National Technical University, 65/17 Nezavisimosti Ave., Minsk, Belarus 220013
Volume :
2
fYear :
2015
Firstpage :
1
Lastpage :
2
Abstract :
A diode-pumped Tm, Ho:KLu(WO4)2 microchip laser Q-switched by a Cr2+:ZnS saturable absorber generated average output power of 131 mW at 2061 nm. The shortest pulses had duration of 9 ns and energy of 10 μJ.
Keywords :
"Crystals","Laser excitation","Cavity resonators","Power generation","Optimized production technology","Diode lasers","Semiconductor lasers"
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
Type :
conf
DOI :
10.1109/CLEOPR.2015.7376155
Filename :
7376155
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3726162
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