DocumentCode :
3726178
Title :
Analysis of the characteristics with increasing the number of QWs for near-ultraviolet LEDs
Author :
Hyo-Shik Choi;Jong-In Shim
Author_Institution :
Department of Electronics and Communication Engineering, Hanyang University, Ansan Gyeonggi-do 426-791, Korea
Volume :
2
fYear :
2015
Firstpage :
1
Lastpage :
2
Abstract :
This paper reports the analysis of the near-ultraviolet light-emitting-diodes (NUV LEDs) characteristics with increasing the number of QWs from 5 to 7 by same growth process. By means of optical, electrical characterization and carrier rate equation analysis, we show that the NUV LEDs performances were improved with increasing the number of QWs by decreasing the non-radiative recombination rate.
Keywords :
"Light emitting diodes","Radiative recombination","Yttrium","Gallium nitride","Substrates","Power generation","Optical buffering"
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
Type :
conf
DOI :
10.1109/CLEOPR.2015.7376171
Filename :
7376171
Link To Document :
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