Growth of semipolar GaN substrates by hydride vapor phase epitaxy on patterned sapphire substrate

The surface roughening and crack generation during the HVPE growth on the MOVPE-grown semipolar GaN template were successfully suppressed by using SiO₂ striped masks perpendicular to the a-axis on the semipolar GaN template. The growth toward the-c-direction during the MOVPE growth was also successfully suppressed by using the growth temperature control; this resulted in a large reduction in the formation of stacking faults in semipolar GaN.