• DocumentCode
    3726203
  • Title

    Optimization of p-electrode pattern for AlGaN-based deep-ultraviolet light-emitting diodes

  • Author

    Guo-Dong Hao;Manabu Taniguchi;Kousei Nakaya;Shin-ichiro Inoue

  • Author_Institution
    Advanced ICT Research Institute, National Institute of Information and Communications Technology (NICT), Kobe 651-2492, Japan
  • Volume
    4
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We studied on various p-electrode patterns to solve current crowding problem in AlGaN-based deep-ultraviolet light-emitting diode. Simulation results of optimized p-electrode pattern showed a uniform current density distribution and improved performance of light output power.
  • Keywords
    "Light emitting diodes","Current density","Power generation","Aluminum gallium nitride","Wide band gap semiconductors","Electrodes","Radiative recombination"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2015.7376316
  • Filename
    7376316
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3726203