• DocumentCode
    3726220
  • Title

    Improvement of modulation speed in Si slow light modulator by optimizing doping profile

  • Author

    Moe Takeuchi;Yosuke Terada;Toshihiko Baba

  • Author_Institution
    Department of Electrical and Computer Engineering, Yokohama National University 79-5 Tokiwadai, Hodogayaku, Yokohama 240-8501, Japan
  • Volume
    4
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We theoretically investigated the modulation speed of Si photonic crystal slow light modulators. Optimizing the doping profile of p/n junction reduces the RC time constant and enhances the speed to 40 Gbps.
  • Keywords
    "Junctions","Modulation","Silicon","Absorption","Lattices","Photonics","Slow light"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2015.7376333
  • Filename
    7376333
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3726220