• DocumentCode
    3726254
  • Title

    A sub-microwatt threshold Raman silicon laser using a high-Q nanocavity

  • Author

    Daiki Yamashita;Yasushi Takahashi;Takashi Asano;Susumu Noda

  • Author_Institution
    Department of Physics and Electronics, Osaka Prefecture University, Sakai, Osaka 599-85 70, Japan
  • Volume
    4
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We develop a nanocavity Raman Si laser with a sub-microwatt threshold of 0.52 μW by accurately matching a frequency spacing of the two nanocavity modes to the Raman shift of Si nanocavity.
  • Keywords
    "Silicon","Yttrium","Stimulated emission","Laser excitation","Power generation","Raman scattering","Photonics"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2015.7376370
  • Filename
    7376370
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3726254