• DocumentCode
    3726325
  • Title

    E-beam pumped mid-ultraviolet sources based on AlGaN multiple quantum wells grown by MBE

  • Author

    X. Rong;S. V. Ivanov;V. N. Jmerik;V. I. Kozlovsky;G. Chen;F. J. Xu;B. Shen;X. Q. Wang

  • Author_Institution
    State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • Volume
    3
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report on the development of e-beam pumped mid-UV (~ 280nm) sources fabricated from AlGaN MQWs grown by plasma-assisted (PA) MBE on AlN/c-Al2O3 templates. The high output power above 100 mW has been demonstrated in a pulse-scanning regime. This achievement is attributed to the enhanced carrier confinement within the high-quality sub-monolayer digital alloying quantum wells and improved quality of the AlN buffer layer due to the high temperature PA MBE growth employed. The time-resolved photoluminescence shows the radiative recombination dominate the recombination process, indicating high crystal qualities.
  • Keywords
    "Temperature measurement","Radiative recombination","Temperature dependence","Aluminum gallium nitride","Wide band gap semiconductors","Power generation","Carrier confinement"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2015.7376445
  • Filename
    7376445
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3726325