Title :
E-beam pumped mid-ultraviolet sources based on AlGaN multiple quantum wells grown by MBE
Author :
X. Rong;S. V. Ivanov;V. N. Jmerik;V. I. Kozlovsky;G. Chen;F. J. Xu;B. Shen;X. Q. Wang
Author_Institution :
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
Abstract :
We report on the development of e-beam pumped mid-UV (~ 280nm) sources fabricated from AlGaN MQWs grown by plasma-assisted (PA) MBE on AlN/c-Al2O3 templates. The high output power above 100 mW has been demonstrated in a pulse-scanning regime. This achievement is attributed to the enhanced carrier confinement within the high-quality sub-monolayer digital alloying quantum wells and improved quality of the AlN buffer layer due to the high temperature PA MBE growth employed. The time-resolved photoluminescence shows the radiative recombination dominate the recombination process, indicating high crystal qualities.
Keywords :
"Temperature measurement","Radiative recombination","Temperature dependence","Aluminum gallium nitride","Wide band gap semiconductors","Power generation","Carrier confinement"
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
DOI :
10.1109/CLEOPR.2015.7376445
