DocumentCode :
3727359
Title :
An optimum inductive matched cascode LNA in 60GHz-band
Author :
Hiroyuki Mizutani;Eiji Taniguchi;Masaomi Tsuru;Ryuji Inagaki;Suguru Kameda;Noriharu Suematsu;Tadashi Takagi;Kazuo Tsubouchi
Author_Institution :
Information Technology R&D Center, Mitsubishi Electric Corporation, Kamakura, Japan
fYear :
2015
Firstpage :
28
Lastpage :
30
Abstract :
This paper presents an optimum interstage matching inductor of a cascode amplifier by formulation, for the first time. The formulation clarifies capacitances of FETs which degrade a gain of the cascode amplifier. The inductive matched cascode LNA fabricated by 90nm CMOS performs 25.6 dB gain with NF of 6 dB and output P1dB of -2.3 dBm at 60GHz while consuming 26.9 mW.
Keywords :
"Field effect transistors","Gain","Admittance","CMOS integrated circuits","Noise measurement","Yttrium","Inductors"
Publisher :
ieee
Conference_Titel :
Radio-Frequency Integration Technology (RFIT), 2015 IEEE International Symposium on
Type :
conf
DOI :
10.1109/RFIT.2015.7377876
Filename :
7377876
Link To Document :
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