• DocumentCode
    3727376
  • Title

    A high gain broadband LNA in GaAs 0.15-?m pHEMT process using inductive feedback gain compensation for radio astronomy applications

  • Author

    Yunshan Wang;Chau-Ching Chiong;Ji-Kang Nai;Huei Wang

  • Author_Institution
    Graduate Institute of Communication Engineering, National Taiwan University, Taipei, Taiwan, R.O.C.
  • fYear
    2015
  • Firstpage
    79
  • Lastpage
    81
  • Abstract
    A broadband, high gain low noise amplifier (LNA) for radio astronomy application is developed. This work is implemented using 0.15-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. An inductive feedback gain compensation topology is applied for broadband design. This LNA shows small signal gain 34.3 dB from 3.2 to 14.7 GHz with 0.8-dB gain variation from 4.6 to 13.8 GHz and a dc consumption 45 mW. It demonstrates a measured noise figure between 1.3 and 1.6 dB from 4.6 to 13.8 GHz.
  • Keywords
    "Gain","PHEMTs","Noise figure","Gallium arsenide","mHEMTs","Microwave integrated circuits","Semiconductor device measurement"
  • Publisher
    ieee
  • Conference_Titel
    Radio-Frequency Integration Technology (RFIT), 2015 IEEE International Symposium on
  • Type

    conf

  • DOI
    10.1109/RFIT.2015.7377893
  • Filename
    7377893
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3727376