A low noise amplifier with coupled matching structure for V-band applications

In this paper, a three-stage low-noise amplifier (LNA) designed for V-band applications is presented. Each stage of the proposed LNA is the common-source topology with inductive degeneration for minimizing the noise figure (NF). The inductors at the gate and source terminals form a coupling structure which extends the bandwidth with a low NF level. This proposed LNA is implemented in the 90-nm CMOS process technology, which achieves a peak gain of 16.48 dB, a minimum NF of 4.5 dB, and an input PidB of -18.7 dBm. The proposed LNA consumes 17.47 mW power from a 1.2-V voltage supply.