DocumentCode :
3727403
Title :
A high efficiency 3?7 GHz class AB CMOS power amplifier for WBAN applications
Author :
A. Gadallah;A. Allam;H. Mosalam;A. B. Abdel-Rahman;H. Jia;Ramesh K. Pokharel
Author_Institution :
Electronics and Communications Engineering Dept., Egypt-Japan University of Science and Technology, Alexandria 21934, Egypt
fYear :
2015
Firstpage :
163
Lastpage :
165
Abstract :
The design of 3-7 GHz class AB two stages power amplifier (PA) for wireless body area network (WBAN) applications in TSMC 0.18 μm is presented. Source and Load-pull contours are employed in order to maximize power added efficiency. The post-layout simulation results of the proposed UWB-PA indicated that the power gain (S21) is 12 dB ± 0.8; the input return loss (S11) and the output return loss (S22) are less than -10 dB and -11 dB respectively over the frequency range from 3 GHz to 7 GHz. In addition, The PA achieved maximum power added efficiency (PAE) of 38.5% at 5 GHz and an output 1-dB compression of 7.21 dBm at the same frequency. Moreover, a group delay variation of ± 32.5 ps was achieved through the frequency band of interest.
Keywords :
"Wireless communication","CMOS integrated circuits","Body area networks","Gain","Delays","Power amplifiers","Impedance matching"
Publisher :
ieee
Conference_Titel :
Radio-Frequency Integration Technology (RFIT), 2015 IEEE International Symposium on
Type :
conf
DOI :
10.1109/RFIT.2015.7377921
Filename :
7377921
Link To Document :
بازگشت