DocumentCode :
3727680
Title :
Interfacing physarum polycephalum with organic memristors
Author :
Alice Dimonte;Agostine Romeo;Giuseppe Tarabella;Pasquale D´Angelo;Victory Erokhin;Salvatore Iannotta
Author_Institution :
Istituto dei Materiali per Elettronica e Magnetismo, Italy
fYear :
2015
fDate :
11/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
3
Abstract :
Since their prediction, memristive devices revolutionized the world of computing and nowadays they have been widely considered as promising candidate for mimicking synapses. In particular, organic-based memristors allow the construction of circuits capable of learning. Physarum Polycephalum slime mold is well suited for the implementation of the functional properties of smart living systems into electronic devices. Physarum has memory patterns that can be associated to learning, generally considered a feature of more complex species. Here we presents the characteristics of an hybrid memristor developed by interfacing poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate), (PEDOT:PSS), with Physarum Polycephalum (PP). The device has memristive features resulting by electrochemical changes occurring into the polymer upon application of anodic potentials across the semiconducting PEDOT:PSS channel.
Keywords :
"Polymers","Electric potential","Memristors","Conductivity","Logic gates","Electrodes","Organisms"
Publisher :
ieee
Conference_Titel :
Memristive Systems (MEMRISYS) 2015 International Conference on
Type :
conf
DOI :
10.1109/MEMRISYS.2015.7378381
Filename :
7378381
Link To Document :
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