• DocumentCode
    3727689
  • Title

    Radiation hard design of HfO2 based 1T1R cells and memory arrays

  • Author

    Alessandro Grossi;Cristiano Calligaro;Eduardo Perez;Jens Schmidt;Florian Teply;Thomas Mausolf;Cristian Zambelli;Piero Olivo;Christian Wenger

  • Author_Institution
    Universita di Ferrara, Dipartimento di Ingegneria, Italy
  • fYear
    2015
  • fDate
    11/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work the electrical performance of a Rad- Hard designed 1T-1R device based on the combination of an Enclosed Layout Transistor (ELT) and a TiN/HfO2/Ti/TiN based resistor is presented for the first time. Moreover, an architectural solution for 1Mbit radiation hard RRAM array implementation is proposed.
  • Keywords
    "Logic gates","Radiation hardening (electronics)","Standards","Switches","Vehicles","Resistance","Layout"
  • Publisher
    ieee
  • Conference_Titel
    Memristive Systems (MEMRISYS) 2015 International Conference on
  • Type

    conf

  • DOI
    10.1109/MEMRISYS.2015.7378390
  • Filename
    7378390
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3727689