Combined optical/e-beam lithography approach for the development of HfO2-based memristors in crossbars

In this work, crossbars with memristors down to 40x40 nm² in size were fabricated by hybrid process combining optical and e-beam lithography. The developed process provides ~90% yield of <;<;forming-free>> nanodevices exhibiting memristive properties with endurance up to 10⁵ cycles, making this approach suitable for neuromorphic applications.