DocumentCode :
3727972
Title :
A new method of the design and technology of PIN diodes
Author :
W. Jablonski
Author_Institution :
Inst. of Electron. Technol., Warsaw, Poland
fYear :
1998
Firstpage :
69
Abstract :
Thermal and series resistance of semiconductor devices, especially high power devices such as high power PIN diodes, is a matter of major importance. This paper presents a new principle of the design and technology of high power PIN diodes which enables a significant reduction in the parasitic thermal and series resistance of the diodes.
Keywords :
"Design methodology","Silicon","Substrates","Thermal resistance","Epitaxial layers","Etching","PIN photodiodes","Semiconductor devices","Electric resistance","Paper technology"
Publisher :
ieee
Conference_Titel :
Microwaves and Radar, 1998. MIKON ´98., 12th International Conference on
Print_ISBN :
83-906662-0-0
Type :
conf
DOI :
10.1109/MIKON.1998.737921
Filename :
737921
Link To Document :
بازگشت