Title :
Gunn diodes for 26-40 GHz
Author :
J. Parafianowicz;J. Klamka;K. Reginski;M. Gorska;H. Wrzesinska;A. Uszynski
Author_Institution :
Inst. of Electron Technol., Warsaw, Poland
Abstract :
The technology of GaAs MBE layers for K-band Gunn diodes is described in the paper along with the method of diode structure preparation. Chips were assembled directly in a microwave generator. The design of measurement circuit and microwave generator, as well as results of experiments are presented.
Keywords :
"Gunn devices","Diodes","Microwave generation","Paper technology","Gallium arsenide","K-band","Assembly","Microwave measurements","Semiconductor device measurement","Microwave circuits"
Conference_Titel :
Microwaves and Radar, 1998. MIKON ´98., 12th International Conference on
Print_ISBN :
83-906662-0-0
DOI :
10.1109/MIKON.1998.737925
