Fundamental limitations for Schottky diode RF energy harvesting

The rectifying element of any wireless power transfer system or RF energy harvester is the critical piece in determining the maximum frequency of operation and maximum energy-conversion efficiency. Schottky diodes are traditionally used for their low threshold voltage, which increases the RF-to-DC conversion efficiency at low powers. This paper connects Schottky diode semiconductor parameters (such as doping level and junction area) to the energy-conversion efficiency through closed-form equations. Through simulations, fundamental wireless power transfer performance is illuminated.