DocumentCode :
3728752
Title :
Study of stability of DC power considering the degradation of MOSFET
Author :
Lifeng Wu; Yu Zheng; Yong Guan
Author_Institution :
College of Information Engineering, Capital Normal University, Beijing 100048, China
fYear :
2015
Firstpage :
1
Lastpage :
6
Abstract :
DC power is the core technology of various power electronic devices and the MOSFET is the key component to affect DC power. In order to research the degradation of MOSFET effect on DC power, we construct an equivalent circuit of MOSFET, and establish the discrete iterative mapping model of the system in continuous current mode. After verifying the impact of MOSFET parasitic on the stability of the system, we study the influence of parasitic parameters based on the nonlinear behavior. The results exhibit that the degradation of MOSFET results in the change of nonlinear behavior of output voltage and influences the stability of the system.
Keywords :
"MOSFET","Semiconductor device modeling"
Publisher :
ieee
Conference_Titel :
Prognostics and System Health Management Conference (PHM), 2015
Type :
conf
DOI :
10.1109/PHM.2015.7380024
Filename :
7380024
Link To Document :
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